The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

Jun. 19, 2019
Applicants:

United Microelectronics Corp., Hsin-Chu, TW;

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;

Inventors:

Feng-Yi Chang, Tainan, TW;

Shih-Fang Tzou, Tainan, TW;

Fu-Che Lee, Taichung, TW;

Chien-Cheng Tsai, Kaohsiung, TW;

Feng-Ming Huang, Pingtung County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/528 (2006.01); H01L 21/311 (2006.01); H01L 27/108 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/31111 (2013.01); H01L 21/76224 (2013.01); H01L 21/76802 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01); H01L 29/0649 (2013.01);
Abstract

A semiconductor memory device and a manufacturing method thereof are provided in the present invention. An under-cut structure is formed at an edge of a bit line contact opening in the process of forming the bit line contact opening for avoiding short problems caused by alignment shifting, and the process window of the process of forming the bit line contact opening may be improved accordingly.


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