The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Mar. 16, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Hsu-Yang Wang, Tainan, TW;
Ping-Cheng Hsu, Taipei, TW;
Shih-Fang Tzou, Tainan, TW;
Chin-Lung Lin, Hsinchu, TW;
Yi-Hsiu Lee, Chiayi County, TW;
Koji Taniguchi, Tainan, TW;
Harn-Jiunn Wang, Kaohsiung, TW;
Tsung-Ying Tsai, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Abstract
A method for forming a memory device includes the steps of providing a substrate, forming an isolation structure in the substrate to define a plurality of active regions in the substrate, the active regions respectively comprising two terminal portions and a central portion between the terminal portions, forming a plurality of island features on the substrate, wherein each of the island features covers two of the terminals portions respectively belonging to two of the active regions, performing a first etching process, using the island features as an etching mask to etch the substrate to define a plurality of island structures and a first recessed region surrounding the island structures on the substrate, and removing the island features to expose the island structures.