Harn-Jiunn Wang

Title: Harn-Jiunn Wang: Innovator in Memory Device Technology

Introduction

Harn-Jiunn Wang is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of memory device technology, holding a total of 7 patents. His innovative approaches have paved the way for advancements in memory device manufacturing.

Latest Patents

Wang's latest patents include a method for forming a memory device. This method involves several steps, such as providing a substrate and forming an isolation structure to define multiple active regions. Each active region comprises two terminal portions and a central portion. The process also includes forming island features on the substrate, which cover the terminal portions of the active regions. A first etching process is then performed using these island features as a mask to etch the substrate, resulting in the definition of island structures and a recessed region surrounding them. Another patent discloses a similar method, emphasizing the importance of the island features in the etching process and the formation of the active regions.

Career Highlights

Throughout his career, Harn-Jiunn Wang has worked with notable companies in the semiconductor industry. He has been associated with United Microelectronics Corporation and Fujian Jinhua Integrated Circuit Co., Ltd. His experience in these organizations has contributed to his expertise in memory device technology.

Collaborations

Wang has collaborated with several talented individuals in his field, including Chin-Lung Lin and Yi-Hsiu Lee. These collaborations have fostered innovation and development in memory device technologies.

Conclusion

Harn-Jiunn Wang's contributions to memory device technology are noteworthy, with a solid portfolio of patents and a career marked by significant collaborations. His work continues to influence advancements in the semiconductor industry.