The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Oct. 18, 2016
United Microelectronics Corp., Hsinchu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Fujian, CN;
Ying-Chiao Wang, Changua County, TW;
Chien-Ting Ho, Taichung, TW;
Le-Tien Jung, Hsinchu, TW;
Shih-Fang Tzou, Tainan, TW;
Chin-Lung Lin, Hsinchu, TW;
Harn-Jiunn Wang, Kaohsiung, TW;
United Microelectronics Corp., Hsinchu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Fujian Province, CN;
Abstract
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a plurality of active areas, and an isolation structure. The substrate has a device region and a peripheral region surrounding the device region. The active areas are located in the substrate in the device region. When viewed from above, the edges of the ends of the active areas adjacent to the boundary of the device region are aligned with each other, and the width of the ends of the active areas adjacent to the boundary of the device region is greater than the width of the other portions of the active areas. The isolation structure is disposed in the substrate and surrounds the active areas and is located in the peripheral region.