The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2022
Filed:
Nov. 05, 2018
Applicants:
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Inventors:
Bo-Ruei Cheng, Kaohsiung, TW;
Li-Wei Feng, Kaohsiung, TW;
Assignees:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10829 (2013.01); H01L 21/02238 (2013.01); H01L 21/76227 (2013.01); H01L 27/1087 (2013.01); H01L 29/0649 (2013.01);
Abstract
A method for fabricating semiconductor device includes the steps of: forming a trench in a substrate; forming a first oxide layer in the trench; forming a silicon layer on the first oxide layer; performing an oxidation process to transform the silicon layer into a second oxide layer; and planarizing the second oxide layer and the first oxide layer to form a shallow trench isolation (STI).