The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Aug. 02, 2018
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Li-Wei Feng, Kaohsiung, TW;

Shih-Hung Tsai, Tainan, TW;

Chao-Hung Lin, Changhua County, TW;

Hon-Huei Liu, Kaohsiung, TW;

Shih-Fang Hong, Tainan, TW;

Jyh-Shyang Jenq, Pingtung County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823821 (2013.01); H01L 21/2255 (2013.01); H01L 21/2256 (2013.01); H01L 21/324 (2013.01); H01L 21/823814 (2013.01); H01L 21/823892 (2013.01); H01L 27/0924 (2013.01); H01L 29/66803 (2013.01); H01L 29/7851 (2013.01); H01L 21/823807 (2013.01);
Abstract

A semiconductor device includes: a substrate having a first region and a second region; a first fin-shaped structure on the first region and a second fin-shaped structure on the second region, wherein each of the first fin-shaped structure and the second fin-shaped structure comprises a top portion and a bottom portion; a first doped layer around the bottom portion of the first fin-shaped structure; a second doped layer around the bottom portion of the second fin-shaped structure; a first liner on the first doped layer; and a second liner on the second doped layer.


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