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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10546922 B1

PDFFull Text
Date of Patent:
Jan. 28, 2020

Filed:

Feb. 06, 2018

Method for fabricating cap layer on an epitaxial layer

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chih-Kai Hsu, Tainan, TW;

Ssu-I Fu, Kaohsiung, TW;

Yu-Hsiang Hung, Tainan, TW;

Wei-Chi Cheng, Kaohsiung, TW;

Jyh-Shyang Jenq, Pingtung County, TW;

Tsung-Mu Yang, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

William F Kraig

Assistant Examiner:

Vicki B Booker

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 23/535 (2006.01); H01L 21/768 (2006.01); H01L 23/485 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 21/28518 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76855 (2013.01); H01L 21/76895 (2013.01); H01L 23/485 (2013.01); H01L 23/535 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01);
Abstract

A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a gate structure is formed on the substrate. Next, a recess is formed adjacent to two sides of the gate structure, and an epitaxial layer is formed in the recess, in which a top surface of the epitaxial layer is lower than a top surface of the substrate. Next, a cap layer is formed on the epitaxial layer, in which a top surface of the cap layer is higher than a top surface of the substrate.

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