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For the Inventor, By the Inventor

Tainan, Taiwan

Tsung-Mu Yang

This inventor holds 24 USPTO granted patents and 6 published patent applications, primarily in High Electron Mobility Transistors. Top assignee: United Microelectronics Corp.. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tsung-Mu Yang. Retrieved from https://idiyas.com/inventor/tsung-mu-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 24 

% Patents Active = 100.0

Average Co-Inventor Count = 4.7

ph-index = 2

Forward Citations = 5(Granted Patents)


Company Filing History:

goldMedal24 out of 7,298 
 
United Microelectronics Corp.
 patents

Years Active: 2015-2026

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Areas of Expertise:
High Electron Mobility Transistor
FinFET Device
Strain Relaxation Layers
Semiconductor Device
Superlattice Structure
Epitaxial Layer
Cap Layer
Fabrication Method
Semiconductor Structure
Stress Relaxation
Manufacturing Method
Semiconductor Technology
24 patents (USPTO):Explore Patents
1. 12740123 - High electron mobility transistor and method of forming the same (2026-09-15),
2. 12677457 - Superlattice structure with stress relaxation layers therein (2026-07-07),
3. 12648166 - Semiconductor device and method for manufacturing the same (2026-06-02),
4. 12369371 - High electron mobility transistor and method for fabricating the same (2025-07-22),
5. 12224339 - High electron mobility transistor (2025-02-11),
6. 12205905 - Semiconductor structure (2025-01-21),
7. 12159930 - High electron mobility transistor and method of forming the same (2024-12-03),
8. 12046640 - Semiconductor device with strain relaxed layer (2024-07-23),
9. 12046639 - Semiconductor device with strain relaxed layer (2024-07-23),
10. 11955519 - Semiconductor device with strain relaxed layer (2024-04-09),
11. 11695067 - High electron mobility transistor and fabrication method thereof (2023-07-04),
12. 11664426 - Semiconductor device with strain relaxed layer (2023-05-30),
13. 11616135 - High electron mobility transistor and method of forming the same (2023-03-28),
14. 11563088 - Semiconductor device with strain relaxed layer (2023-01-24),
15. 11557666 - High electron mobility transistor and fabrication method thereof (2023-01-17),

Title: The Innovative Journey of Inventor Tsung-Mu Yang

Introduction: Tsung-Mu Yang, a distinguished inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Tsung-Mu Yang's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar power systems that are more efficient and cost-effective.

Career Highlights: With a career spanning over two decades, Tsung-Mu Yang has established himself as a leading figure in the tech industry. His innovative solutions have revolutionized the way we harness and utilize clean energy sources.

Collaborations: Throughout his career, Tsung-Mu Yang has collaborated with top research institutions and leading tech companies to bring his inventions to life. His partnerships have been instrumental in turning his visionary ideas into tangible products that benefit society.

Conclusion: Tsung-Mu Yang's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a trailblazer in the field of technology. His work continues to inspire future generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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