The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Dec. 30, 2021
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Yen-Hsing Chen, Taipei City, TW;
Chun-Liang Kuo, Kaohsiung City, TW;
Tsung-Mu Yang, Tainan City, TW;
Yu-Ren Wang, Tainan City, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H10D 30/015 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01);
Abstract
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a substrate, a channel layer on the substrate, a first barrier layer on the channel layer, a second barrier layer on the first barrier layer, and a gate element on the second barrier layer. The first barrier layer includes a first material with a first band gap, the second barrier layer includes a second material with a second band gap, and the first band gap is greater than the second band gap.