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For the Inventor, By the Inventor

Taipei, Taiwan

Yen-Hsing Chen

USPTO Granted Patents = 22 

Average Co-Inventor Count = 5.1

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:

goldMedal22 out of 7,085 
 
United Microelectronics Corp.
 patents

Years Active: 2016-2025

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22 patents (USPTO):Explore Patents
1. 12369371 - High electron mobility transistor and method for fabricating the same (2025-07-22),
2. 12224339 - High electron mobility transistor (2025-02-11),
3. 12205905 - Semiconductor structure (2025-01-21),
4. 12159930 - High electron mobility transistor and method of forming the same (2024-12-03),
5. 12046640 - Semiconductor device with strain relaxed layer (2024-07-23),
6. 12046639 - Semiconductor device with strain relaxed layer (2024-07-23),
7. 11955519 - Semiconductor device with strain relaxed layer (2024-04-09),
8. 11695067 - High electron mobility transistor and fabrication method thereof (2023-07-04),
9. 11664426 - Semiconductor device with strain relaxed layer (2023-05-30),
10. 11616135 - High electron mobility transistor and method of forming the same (2023-03-28),
11. 11563088 - Semiconductor device with strain relaxed layer (2023-01-24),
12. 11557666 - High electron mobility transistor and fabrication method thereof (2023-01-17),
13. 11508818 - Semiconductor device with strain relaxed layer (2022-11-22),
14. 11355626 - High electron mobility transistor (2022-06-07),
15. 11257939 - High electron mobility transistor (2022-02-22),

Title: The Innovative Contributions of Yen-Hsing Chen

Introduction: Yen-Hsing Chen, a prominent inventor based in Taipei, TW, has made significant strides in the field of semiconductor technology. With a total of 21 patents to his name, his work showcases the potential of innovations in high electron mobility transistors and semiconductor structures, reflecting a commitment to advancing technology.

Latest Patents: Yen-Hsing Chen's most recent patents include a groundbreaking design for a high electron mobility transistor (HEMT). This HEMT features an aluminum gallium nitride layer positioned above a gallium nitride layer, which is then supported by a zinc oxide layer beneath. The arrangement includes both source and drain electrodes situated on the aluminum gallium nitride layer, with a gate electrode strategically placed in between. Additionally, he has developed a novel semiconductor structure, comprising a substrate that covers a device region, a peripheral region, and a transition region connecting the two. A unique aspect of this structure is that a portion of the epitaxial layer on the peripheral region manifests with a poly-crystal structure.

Career Highlights: Yen-Hsing Chen currently works with United Microelectronics Corporation, where his research and development efforts concentrate on cutting-edge semiconductor technologies. His patents reflect a deep understanding of electrical engineering principles and their application in modern electronics.

Collaborations: Throughout his career, Chen has worked alongside talented colleagues such as Yu-Ren Wang and Tsung-Mu Yang. Together, these professionals contribute to advancements in semiconductor technology, fostering a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion: Yen-Hsing Chen's contributions to the field of semiconductor technology are notable. With a strong portfolio of patents and a dedication to collaboration, he continues to be an influential figure in transforming innovative ideas into practical applications, shaping the future of technology.

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