The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2026

Filed:

May. 31, 2021
Applicant:

United Microelectronics Corp., Hsin-Chu City, TW;

Inventors:

Yu-Ming Hsu, Changhua County, TW;

Chun-Liang Kuo, Kaohsiung City, TW;

Yen-Hsing Chen, Taipei City, TW;

Tsung-Mu Yang, Tainan City, TW;

Yu-Ren Wang, Tainan City, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/815 (2025.01); H10D 30/47 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01); H10W 42/00 (2026.01);
U.S. Cl.
CPC ...
H10D 62/8171 (2025.01); H10D 30/4738 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01); H10W 42/121 (2026.01);
Abstract

A superlattice structure includes a substrate. A first superlattice stack is disposed on the substrate. The first superlattice stack includes a first superlattice layer, a second superlattice layer and a third superlattice layer disposed from bottom to top. Three stress relaxation layers respectively disposed between the first superlattice layer and the second superlattice layer, the second superlattice layer and the third superlattice layer and on the third superlattice layer. Each of the stress relaxation layers includes a group III-V compound layer. The thickness of each of the stress relaxation layers should be greater than a relaxation critical thickness.


Find Patent Forward Citations

Loading…