United Microelectronics Corp.

Tsung-Mu Yang

Yu-Ming Hsu

Yu-Ren Wang

Yen-Hsing Chen

Yu-Chi Wang

Chun-Liang Kuo

Tsang-Hsuan Wang

Ssu-I Fu

Chih-Kai Hsu

Yu-Hsiang Hung

Jyh-Shyang Jenq

Ching-I Li

Wei-Chi Cheng

Yi-Wei Chen

Chin-Cheng Chien

Tien-Wei Yu

Yu-Shu Lin

Ming-Hua Chang

Tien-Chen Chan

Chun-Jen Chen

Sheng-Hsu Liu

I-Cheng Hu

Chung-Min Tsai

Chieh-Lung Wu

Fu-Cheng Yen

Yen-Lun Chen

Ruei-Hong Shen

A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a gate electrode on the p-type semiconductor layer, and then forming a source electrode and a drain electrode adjacent to two sides of the gate electrode. Preferably, the buffer layer further includes a bottom portion having a first carbon concentration and a top portion having a second carbon concentration, in which the second carbon concentration is less than the first carbon concentration and a thickness of the bottom portion is less than a thickness of the top portion.

High electron mobility transistor and method for fabricating the same

An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.

High electron mobility transistor

A semiconductor structure includes a substrate including a device region, a peripheral region surrounding the device region, and a transition region disposed between the device region and the peripheral region. An epitaxial layer is disposed on the device region, the peripheral region, and the transition region. A first portion of the epitaxial layer on the peripheral region has a poly-crystal structure.

Semiconductor structure

A high electron mobility transistor (HEMT) includes a substrate, a P-type III-V composition layer, a gate electrode and a carbon containing layer. The P-type III-V composition layer is disposed on the substrate, and the gate electrode is disposed on the P-type III-V composition layer. The carbon containing layer is disposed under the P-type III-V composition layer to function like an out diffusion barrier for preventing from the dopant within the P-type III-V composition layer diffusing into the stacked layers underneath during the annealing process.

High electron mobility transistor and method of forming the same

A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

Semiconductor device with strain relaxed layer

A high-electron mobility transistor includes a substrate; a channel layer on the substrate; a AlGaN layer on the channel layer; and a P&#x2014;GaN gate on the AlGaN layer. The AlGaN layer comprises a first region and a second region. The first region has a composition that is different from that of the second region.

High electron mobility transistor and fabrication method thereof

A high electron mobility transistor (HEMT) includes a buffer layer on a substrate, in which the buffer layer includes a first buffer layer and a second buffer layer. Preferably, the first buffer layer includes a first layer of the first buffer layer comprising AlGaN on the substrate and a second layer of the first buffer layer comprising AlGaN on the first layer of the first buffer layer. The second buffer layer includes a first layer of the second buffer layer comprising AlGaN on the first buffer layer and a second layer of the second buffer layer comprising AlGaN on the first layer of the second buffer layer, in which x&#x3e;z&#x3e;y&#x3e;w.

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Tainan, Taiwan

Tsung-Mu Yang