United Microelectronics Corp.

Untied Microelectronics Corp.

Jyh-Shyang Jenq

Ssu-I Fu

Chih-Kai Hsu

Yu-Hsiang Hung

Shih-Hung Tsai

Li-Wei Feng

Chao-Hung Lin

Wei-Chi Cheng

Shih-Fang Hong

Hon-Huei Liu

Chien-Ting Lin

Tong-Jyun Huang

Jia-Rong Wu

Nan-Yuan Huang

Ching-Yu Chang

Chih-Sen Huang

Ying-Chiao Wang

Yi-Wei Chen

Yu-Ping Wang

Ching-Wen Hung

Yu-Hsiang Lin

Yi-Hui Lee

Yu-Shu Lin

Chien-Hao Chen

Ying-Cheng Liu

Hsuan-Hsu Chen

YI-Fan Li

Tsung-Mu Yang

Tien-Chen Chan

Ying-Tsung Chen

Yi-Han Ye

Yi-Kuan Wu

Kun-Hsin Chen

Yu-Cheng Tung

En-Chiuan Liou

Chun-Hsien Huang

Chen-Ming Huang

Yu-Tse Kuo

Hsin-Yu Chen

An-Chi Liu

Shu-Ru Wang

Shou-Wei Hsieh

Yen-Liang Wu

Ching-Ling Lin

Yi-Wen Chen

Chun-Hao Lin

Chun-Yao Yang

Li-Chiang Chen

Chia-Hsun Tseng

Ming-Shiou Hsieh

Rong-Sin Lin

Yi-Ren Chen

Chih-Wei Wu

Mei-Chen Chen

A semiconductor device includes a gate structure on a substrate, a spacer around the gate structure, and a buffer layer adjacent to the gate structure. Preferably, the buffer layer includes a crescent moon shape and the buffer layer includes an inner curve, an outer curve, and a planar surface connecting the inner curve and an outer curve along a top surface of the substrate, in which the planar surface directly contacts the outer curve on an outer sidewall of the spacer.

Semiconductor device and method for fabricating the same

A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a spacer around the gate structure; and forming a buffer layer adjacent to the gate structure. Preferably, the buffer layer includes a crescent moon shape and the buffer layer includes an inner curve, an outer curve, and a planar surface connecting the inner curve and an outer curve along a top surface of the substrate, in which the planar surface directly contacts the outer curve on an outer sidewall of the spacer.

A semiconductor device includes: a substrate having a first region and a second region; a first fin-shaped structure on the first region and a second fin-shaped structure on the second region, wherein each of the first fin-shaped structure and the second fin-shaped structure comprises a top portion and a bottom portion; a first doped layer around the bottom portion of the first fin-shaped structure; a second doped layer around the bottom portion of the second fin-shaped structure; a first liner on the first doped layer; and a second liner on the second doped layer.

Semiconductor device

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; forming an epitaxial layer adjacent to the gate structure; forming an interlayer dielectric (ILD) layer on the gate structure; forming a first contact hole in the ILD layer adjacent to the gate structure; and forming a cap layer in the recess, in which a top surface of the cap layer is even with or lower than a top surface of the substrate.

A semiconductor device includes at least a substrate, fin-shaped structures, a protection layer, epitaxial layers, and a gate electrode. The fin-shaped structures are disposed in a first region and a second region of the substrate. The protection layer conformally covers the surface of the substrate and the sidewalls of fin-shaped structures. The epitaxial layers respectively conformally and directly cover the fin-shaped structures in the first region. The gate electrode covers the fin-shaped structures in the second region, and the protection layer is disposed between the gate electrode and the fin-shaped structures.

Semiconductor device with metal gates

A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a gate structure is formed on the substrate. Next, a recess is formed adjacent to two sides of the gate structure, and an epitaxial layer is formed in the recess, in which a top surface of the epitaxial layer is lower than a top surface of the substrate. Next, a cap layer is formed on the epitaxial layer, in which a top surface of the cap layer is higher than a top surface of the substrate.

Method for fabricating cap layer on an epitaxial layer

A method for fabricating semiconductor device includes the steps of: providing a substrate; forming a gate structure on the substrate; forming a spacer adjacent to the gate structure; forming a recess adjacent to the spacer; forming a buffer layer in the recess, wherein the buffer layer comprises a crescent moon shape; and forming an epitaxial layer on the buffer layer.

Method for fabricating semiconductor device

A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a first spacer adjacent to the first fin-shaped structure and a second spacer adjacent to the second fin-shaped structure; and using the first spacer and the second spacer as mask to remove part of the substrate for forming a third fin-shaped structure on the first region and a fourth fin-shaped structure on the second region, in which the third fin-shaped structure includes a first top portion and a first bottom portion and the fourth fin-shaped structure includes a second top portion and a second bottom portion.

A method of forming a semiconductor fin structure is provided. A substrate is provided, which has at least two sub regions and a dummy region disposed between the two sub regions. A recess is disposed in each sub region. A semiconductor layer is formed to fill the recesses. A patterned mask layer is formed on the semiconductor layer in the sub regions and on the substrate in the dummy region. The substrate and the semiconductor layer are removed by using the patterned mask layer as a mask, thereby forming a plurality of fin structures in the sub regions and a plurality of dummy fin structures in the dummy region.

Method of forming semiconductor fin structure

A semiconductor device and method of forming the same, the semiconductor device includes a first and second fin shaped structures, a first and second gate structures and a first and second plugs. The first and second fin shaped structures are disposed on a first region and a second region of a substrate and the first and second gate structure are disposed across the first and second fin shaped structures, respectively. A dielectric layer is disposed on the substrate, covering the first and second gate structure. The first and second plugs are disposed in the dielectric layer, wherein the first plug is electrically connected first source/drain regions adjacent to the first gate structure and contacts sidewalls of the first gate structure, and the second plug is electrically connected to second source/drain regions adjacent to the second gate structure and not contacting sidewalls of the second gate structure.

Method of forming semiconductor device

A method for fabricating semiconductor device includes the steps of: providing a substrate having a first fin-shaped structure thereon; forming a spacer adjacent to the first fin-shaped structure; using the spacer as mask to remove part of the substrate for forming a second fin-shaped structure, wherein the second fin-shaped structure comprises a top portion and a bottom portion; and forming a doped portion in the bottom portion of the second fin-shaped structure.

A method for making a semiconductor device. A substrate having a fin structure is provided. A continuous dummy gate line is formed on the substrate. The dummy gate line strides across the fin structure. A source/drain structure is formed on the fin structure on both sides of the dummy gate line. An interlayer dielectric (ILD) is formed on the dummy gate line and around the dummy gate line. The ILD is polished to reveal a top surface of the dummy gate line. After polishing the ILD, the dummy gate line is segmented into separate dummy gates.

Semiconductor structure

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Pingtung County, Taiwan

Jyh-Shyang Jenq