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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12302608 B1

PDFFull Text
Date of Patent:
May. 13, 2025

Filed:

May. 31, 2024

Nanowire transistor and method for fabricating the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Po-Kuang Hsieh, Kaohsiung, TW;

Shih-Hung Tsai, Tainan, TW;

Ching-Wen Hung, Tainan, TW;

Chun-Hsien Lin, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Tong-Ho Kim

Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/80 (2025.01); H10D 62/83 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H10D 30/01 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 62/8303 (2025.01); H10D 62/882 (2025.01); H10D 64/62 (2025.01);
Abstract

A nanowire transistor includes a channel structure on a substrate, a gate structure on and around the channel structure, a source/drain structure adjacent to two sides of the gate structure, and a contact plug connected to the source/drain structure. Preferably, the source/drain structure includes graphene and the contact plug further includes a silicide layer on the source/drain structure, a graphene layer on the silicide layer, and a barrier layer on the graphene layer.

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Hsieh, Po-Kuang. (2025). Nanowire transistor and method for fabricating the same (U.S. Patent No. 12302608). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12302608

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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