The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
May. 31, 2024
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Po-Kuang Hsieh, Kaohsiung, TW;
Shih-Hung Tsai, Tainan, TW;
Ching-Wen Hung, Tainan, TW;
Chun-Hsien Lin, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/80 (2025.01); H10D 62/83 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H10D 30/01 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 62/8303 (2025.01); H10D 62/882 (2025.01); H10D 64/62 (2025.01);
Abstract
A nanowire transistor includes a channel structure on a substrate, a gate structure on and around the channel structure, a source/drain structure adjacent to two sides of the gate structure, and a contact plug connected to the source/drain structure. Preferably, the source/drain structure includes graphene and the contact plug further includes a silicide layer on the source/drain structure, a graphene layer on the silicide layer, and a barrier layer on the graphene layer.