The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Dec. 06, 2023
United Microelectronics Corp., Hsin-Chu City, TW;
Yi Chuen Eng, Tainan City, TW;
Tzu-Feng Chang, Tainan City, TW;
Teng-Chuan Hu, Tainan City, TW;
Yi-Wen Chen, Tainan City, TW;
Yu-Hsiang Lin, New Taipei City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A FinFET LDMOS device includes a semiconductor substrate; juxtaposed first well and second well in the semiconductor substrate; semiconductor fins extending on the semiconductor substrate along a first direction, the semiconductor fins including a first fin portion in the first well and a second fin portion in the second well; an extra semiconductor body adjoining the first fin portion and the second fin portion and extending along a second direction; a source region on the first fin portion; a drain region on the second fin portion; a gate covering the semiconductor fin and extending along the second direction, wherein the gate partially overlaps the first fin portion and partially overlaps the second fin portion, and the extra semiconductor body is covered by the gate; and a single-diffusion break structure embedded in the second fin portion and between the gate and drain region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile