Tzu-Feng Chang

Title: Tzu-Feng Chang: Innovator in SRAM Technology

Introduction

Tzu-Feng Chang is a notable inventor based in Pingtung County, Taiwan. He has made significant contributions to the field of static random access memory (SRAM) technology. With a total of 3 patents to his name, Chang's work has advanced the design and manufacturing methods of SRAM.

Latest Patents

Chang's latest patents include innovative designs for SRAM layout patterns. One of his inventions, titled "Layout pattern of static random access memory and the forming method thereof," provides a layout pattern that includes multiple gate structures on a substrate. This design features a combination of pull-up transistors, pull-down transistors, and access transistors, forming a latch circuit that enhances memory cell performance. Another patent, "Layout pattern for SRAM and manufacturing methods thereof," details a layout pattern that incorporates a latch circuit with four transistors and access transistors connected to word and bit lines, optimizing the functionality of SRAM cells.

Career Highlights

Tzu-Feng Chang is currently employed at United Microelectronics Corporation, a leading semiconductor company. His work at this organization has allowed him to focus on innovative memory technologies, contributing to the advancement of the semiconductor industry.

Collaborations

Chang has collaborated with talented coworkers, including Jun-Jie Wang and Yu-Lin Wang. Their combined expertise has fostered a productive environment for innovation and development in SRAM technology.

Conclusion

Tzu-Feng Chang's contributions to SRAM technology through his patents and work at United Microelectronics Corporation highlight his role as a key innovator in the field. His advancements continue to influence the design and efficiency of memory technologies.