The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Mar. 24, 2022
Applicant:
United Microelectronics Corp., Hsin-Chu City, TW;
Inventors:
Hung-Yi Wu, Keelung City, TW;
Jia-Rong Wu, Kaohsiung City, TW;
Yu-Hsiang Lin, New Taipei City, TW;
Yi-Wen Chen, Tainan City, TW;
Kun-Sheng Yang, Pingtung County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/01 (2023.01); H10P 50/00 (2026.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); H10P 50/691 (2026.01);
Abstract
A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a substrate, forming a spin orbit torque (SOT) layer on the MTJ, forming an inter-metal dielectric (IMD) layer around the MTJ and the SOT layer, forming a first hard mask on the IMD layer, forming a semiconductor layer on the first hard mask, and then patterning the first hard mask.