This inventor holds 2 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignee: United Microelectronics Corp.. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Kun-Sheng Yang: Innovator in Semiconductor Technology
Introduction
Kun-Sheng Yang is a prominent inventor based in Pingtung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative methods for fabricating semiconductor devices, which are crucial for modern electronics.
Latest Patents
Yang's latest patents include a "Method for Fabricating Semiconductor Device" and a "Semiconductor Device and Method for Fabricating the Same." The first patent outlines a comprehensive method that involves forming a magnetic tunneling junction (MTJ) on a substrate, followed by the creation of a spin orbit torque (SOT) layer and an inter-metal dielectric (IMD) layer. The process continues with the formation of a hard mask and a semiconductor layer, culminating in the patterning of the hard mask. The second patent describes a semiconductor device that features a substrate with distinct regions, including a medium-voltage (MV) region and a logic region, along with a gate structure and specific diffusion break structures.
Career Highlights
Kun-Sheng Yang is currently associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His role at the company allows him to apply his innovative ideas and contribute to the advancement of semiconductor technologies.
Conclusion
Kun-Sheng Yang's work in semiconductor technology exemplifies the importance of innovation in the electronics sector. His patents reflect a commitment to enhancing the efficiency and functionality of semiconductor devices.