The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

May. 10, 2023
Applicant:

United Microelectronics Corp., Hsin-Chu City, TW;

Inventors:

Kun-Sheng Yang, Pingtung County, TW;

Yi-Wen Chen, Tainan City, TW;

Hung-Yi Wu, Keelung City, TW;

Yi Chuen Eng, Tainan City, TW;

Yu-Hsiang Lin, New Taipei City, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 84/834 (2025.01);
Abstract

A semiconductor device includes a substrate having a medium-voltage (MV) region and a logic region, a gate structure on the MV region, a first single diffusion break (SDB) structure and a second SDB structure in the substrate directly under the gate structure, and a source/drain region adjacent to two sides of the gate structure. Preferably, top surfaces of the first SDB structure and the second SDB structure are coplanar, bottom surfaces of the first SDB structure and the second SDB structure are coplanar, and the first SDB structure and the second SDB structure are made of same material.


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