The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Oct. 05, 2022
United Microelectronics Corp., Hsin-Chu, TW;
Chun-Ya Chiu, Tainan, TW;
Ssu-I Fu, Kaohsiung, TW;
Chin-Hung Chen, Tainan, TW;
Jin-Yan Chiou, Tainan, TW;
Wei-Chuan Tsai, Changhua County, TW;
Yu-Hsiang Lin, New Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
An n-type metal oxide semiconductor transistor includes a gate structure, two source/drain regions, two amorphous portions and a silicide. The gate structure is disposed on a substrate. The two source/drain regions are disposed in the substrate and respectively located at two sides of the gate structure, wherein at least one of the source/drain regions is formed with a dislocation. The two amorphous portions are respectively disposed in the two source/drain regions. The silicide is disposed on the two source/drain regions, wherein at least one portion of the silicide overlaps the two amorphous portions.