The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Apr. 13, 2023
United Microelectronics Corp., Hsin-Chu City, TW;
Guang-Yu Lo, New Taipei City, TW;
Chun-Tsen Lu, Tainan City, TW;
Chung-Fu Chang, Tainan City, TW;
Chih-Shan Wu, Tainan City, TW;
Yu-Hsiang Lin, New Taipei City, TW;
Wei-Hao Chang, Taichung City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A method for fabricating a semiconductor device includes the steps of forming a fin-shaped structure on a substrate, forming a first trench and a second trench in the fin-shaped structure, forming a first dielectric layer in the first trench and the second trench, removing part of the first dielectric layer, forming a second dielectric layer in the first trench and the second trench to form a first single diffusion break (SDB) structure and a second SDB structure, and then forming a gate structure on the fin-shaped structure, the first SDB structure, and the second SDB structure.