The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
May. 12, 2023
United Microelectronics Corp., Hsin-Chu City, TW;
Chin-Hung Chen, Tainan City, TW;
Ssu-I Fu, Kaohsiung City, TW;
Yu-Hsiang Lin, New Taipei City, TW;
PO-Kuang Hsieh, Kaohsiung City, TW;
Jia-He Lin, New Taipei City, TW;
Sheng-Yao Huang, Kaohsiung City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A method for fabricating a semiconductor device includes the steps of first providing a substrate having a high-voltage (HV) region and a medium-voltage (MV) region, forming a first trench on the HV region, forming a second trench adjacent to the first trench and extending the first trench to form a third trench, forming a first shallow trench isolation (STI) in the second trench and a second STI in the third trench, and then forming a first gate structure between the first STI and the second STI. Preferably, a bottom surface of the second STI is lower than a bottom surface of the first STI.