The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Jul. 15, 2024
United Microelectronics Corp., Hsin-Chu City, TW;
Chih-Kai Hsu, Tainan City, TW;
Ssu-I Fu, Kaohsiung City, TW;
Yu-Hsiang Lin, New Taipei City, TW;
Chien-Ting Lin, Tainan City, TW;
Chia-Jung Hsu, Tainan City, TW;
Chun-Ya Chiu, Tainan City, TW;
Chin-Hung Chen, Tainan City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A semiconductor device includes a substrate having a high-voltage (HV) region, a medium-voltage (MV) region, and a low-voltage (LV) region, a HV device on the HV region, and a LV device on the LV region. Preferably, the HV device includes a first base on the substrate, a first gate dielectric layer on the first base, and a first gate electrode on the first gate dielectric layer. The LV device includes a fin-shaped structure on the substrate and a second gate electrode on the fin-shaped structure, in which a top surface of the first gate dielectric layer is lower than a top surface of the fin-shaped structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile