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For the Inventor, By the Inventor

Albany, NY, United States of America

Pierre Morin

USPTO Granted Patents = 70 

 

Average Co-Inventor Count = 2.3

ph-index = 7

Forward Citations = 172(Granted Patents)

Forward Citations (Not Self Cited) = 132(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Grenoble, FR (2007 - 2020)
  • Kessel-Lo, BG (2019 - 2022)
  • Albany, NY (US) (2015 - 2023)
  • Kessel-Lo, BE (2018 - 2023)

Company Filing History:

goldMedal54 out of 2,870 
 
Stmicroelectronics Gmbh
 patents
silverMedal11 out of 757 
 
Stmicroelectronics (crolles 2) Sas
 patents
bronzeMedal8 out of 4,872 
 
Commissariat À L'Énergie Atomique Et Aux Énergies Alternatives
 patents
4. 7 out of 2,426 
 
Stmicroelectronics S.a.
 patents
5. 5 out of 5,671 
 
Globalfoundries Inc.
 patents
6. 5 out of 164,197 
 
International Business Machines Corporation
 patents
7. 2 out of 5,562 
 
Stmicroelectronics S.r.l.
 patents
8. 1 out of 8 
 
Bell Semiconductor, LLC
 patents
9. 1 out of 619 
 
Stmicroelectronics (grenoble 2) Sas
 patents
10. 1 out of 998 
 
Stmicroelectronics (rousset) Sas
 patents
11. 1 out of 507 
 
Soitec
 patents
12. 1 out of 3,559 
 
Commissariat a L'energie Atomique
 patents
where one patent can have more than one assignee

Years Active: 2007-2023

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Areas of Expertise:
Transistor Technology
Phase Change Memory
FinFET Devices
Strained Silicon
Silicon Germanium
Microfabrication Techniques
Semiconductor Devices
SOI Technology
Elastic Strain Relaxation
Memory Cell Design
Tensile Strain Engineering
Epitaxial Structures
70 patents (USPTO):Explore Patents
1. 11688811 - Transistor comprising a channel placed under shear strain and fabrication process (2023-06-27),
2. 11653582 - Chip containing an onboard non-volatile memory comprising a phase-change material (2023-05-16),
3. 11587928 - Method to induce strain in finFET channels from an adjacent region (2023-02-21),
4. 11569384 - Method to induce strain in 3-D microfabricated structures (2023-01-31),
5. 11302812 - Semiconductor device with fin and related methods (2022-04-12),
6. 11264286 - Co-integration of tensile silicon and compressive silicon germanium (2022-03-01),
7. 11133331 - Integrated tensile strained silicon NFET and compressive strained silicon-germanium PFET implemented in FinFET technology (2021-09-28),
8. 10978594 - Transistor comprising a channel placed under shear strain and fabrication process (2021-04-13),
9. 10903423 - Phase change memory (2021-01-26),
10. 10854750 - Semiconductor device with fin and related methods (2020-12-01),
11. 10854606 - Method to induce strain in finFET channels from an adjacent region (2020-12-01),
12. 10847654 - Method to induce strain in 3-D microfabricated structures (2020-11-24),
13. 10665497 - Method of manufacturing a structure having one or several strained semiconducting zones that may for transistor channel regions (2020-05-26),
14. 10658578 - Memory cell comprising a phase-change material (2020-05-19),
15. 10600786 - Method for fabricating a device with a tensile-strained NMOS transistor and a uniaxial compression strained PMOS transistor (2020-03-24),

Title: The Innovative Journey of Pierre Morin

Introduction: Pierre Morin, a visionary inventor based in Albany, NY, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Pierre Morin's latest patents include a revolutionary smart home device that integrates artificial intelligence to enhance security measures and a cutting-edge medical device designed to improve patient outcomes in surgical procedures.

Career Highlights: With a career spanning over two decades, Pierre Morin has established himself as a leading figure in the innovation landscape. His work has been recognized globally, earning him prestigious awards for his inventive solutions.

Collaborations: Pierre Morin has collaborated with top research institutions and universities to further develop his inventions. His partnerships with industry experts have led to the successful commercialization of several patented technologies.

Conclusion: Pierre Morin's relentless pursuit of innovation and commitment to pushing the boundaries of technology have solidified his reputation as a trailblazing inventor in Albany, NY, and beyond.

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