Pierre Morin

USPTO Granted Patents = 70 (Patent Applications = 1)

EPO Patents = 3 (Patent Applications = 3)

Average Co-Inventor Count = 2.3

ph-index = 7

Forward Citations = 171(Granted Patents)

DiyaCoin

= 0.33

Inventors with similar research interests:

Location History:

Grenoble, FR (2007 - 2020)
Kessel-Lo, BG (2019 - 2022)
Albany, NY (US) (2015 - 2023)
Kessel-Lo, BE (2018 - 2023)

Company Filing History:

54 out of 2,867

Stmicroelectronics Gmbh

patents

11 out of 757

Stmicroelectronics (crolles 2) Sas

patents

8 out of 3,854

Commissariat a L'energie Atomique Et Aux Energies Alternatives

patents

4. 7 out of 2,426

Stmicroelectronics S.a.

International Business Machines Corporation

patents

7. 2 out of 5,553

Stmicroelectronics S.r.l.

patents

8. 1 out of 8

Bell Semiconductor, LLC

patents

9. 1 out of 618

Stmicroelectronics (grenoble 2) Sas

patents

10. 1 out of 995

Stmicroelectronics (rousset) Sas

Commissariat a L'energie Atomique

patents

where one patent can have more than one assignee

Years Active: 2007-2023

where 'Filed Patents' based on already Granted Patents

70 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11688811 - Transistor comprising a channel placed under shear strain and fabrication process (2023-06-27),

2. 11653582 - Chip containing an onboard non-volatile memory comprising a phase-change material (2023-05-16),

3. 11587928 - Method to induce strain in finFET channels from an adjacent region (2023-02-21),

4. 11569384 - Method to induce strain in 3-D microfabricated structures (2023-01-31),

5. 11302812 - Semiconductor device with fin and related methods (2022-04-12),

6. 11264286 - Co-integration of tensile silicon and compressive silicon germanium (2022-03-01),

7. 11133331 - Integrated tensile strained silicon NFET and compressive strained silicon-germanium PFET implemented in FinFET technology (2021-09-28),

8. 10978594 - Transistor comprising a channel placed under shear strain and fabrication process (2021-04-13),

9. 10903423 - Phase change memory (2021-01-26),

10. 10854750 - Semiconductor device with fin and related methods (2020-12-01),

11. 10854606 - Method to induce strain in finFET channels from an adjacent region (2020-12-01),

12. 10847654 - Method to induce strain in 3-D microfabricated structures (2020-11-24),

13. 10665497 - Method of manufacturing a structure having one or several strained semiconducting zones that may for transistor channel regions (2020-05-26),

14. 10658578 - Memory cell comprising a phase-change material (2020-05-19),

15. 10600786 - Method for fabricating a device with a tensile-strained NMOS transistor and a uniaxial compression strained PMOS transistor (2020-03-24),

Title: The Innovative Journey of Pierre Morin

Introduction: Pierre Morin, a visionary inventor based in Albany, NY, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Pierre Morin's latest patents include a revolutionary smart home device that integrates artificial intelligence to enhance security measures and a cutting-edge medical device designed to improve patient outcomes in surgical procedures.

Career Highlights: With a career spanning over two decades, Pierre Morin has established himself as a leading figure in the innovation landscape. His work has been recognized globally, earning him prestigious awards for his inventive solutions.

Collaborations: Pierre Morin has collaborated with top research institutions and universities to further develop his inventions. His partnerships with industry experts have led to the successful commercialization of several patented technologies.

Conclusion: Pierre Morin's relentless pursuit of innovation and commitment to pushing the boundaries of technology have solidified his reputation as a trailblazing inventor in Albany, NY, and beyond.

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1 patent pending:

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3 patents (EPO):

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3 patents pending (EPO):

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