The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
Nov. 08, 2018
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Stmicroelectronics (Grenoble 2) Sas, Grenoble, FR;
Stmicroelectronics (Rousset) Sas, Rousset, FR;
Franck Arnaud, St. Nazaire les Eymes, FR;
David Galpin, Le Cheylas, FR;
Stephane Zoll, Froges, FR;
Olivier Hinsinger, Barraux, FR;
Laurent Favennec, Villard Bonnot, FR;
Jean-Pierre Oddou, Saint-Ismier, FR;
Lucile Broussous, Goncelin, FR;
Philippe Boivin, Venelles, FR;
Olivier Weber, Grenoble, FR;
Philippe Brun, Meylan, FR;
Pierre Morin, Kessel-Lo, BE;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
STMicroelectronics (Grenoble 2) SAS, Grenoble, FR;
STMicroelectronics (Rousset) SAS, Rousset, FR;
Abstract
An electronic chip includes memory cells made of a phase-change material and a transistor. First and second vias extend from the transistor through an intermediate insulating layer to a same height. A first metal level including a first interconnection track in contact with the first via is located over the intermediate insulating layer. A heating element for heating the phase-change material is located on the second via, and the phase-change material is located on the heating element. A second metal level including a second interconnection track is located above the phase-change material. A third via extends from the phase-change material to the second interconnection track.