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EPO Patents = 2

Forward Citations = 2

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6 inventors (with patents filed for the assignee):

Nicolas J Loubet (7 out of 303 patents)

Prasanna Khare (4 out of 49 patents)

Qing Liu (3 out of 187 patents)

4. Pierre Morin (2 out of 4 patents)

5. Pierre Morin (1 out of 70 patents)

6. Takashi Kanatake (1 out of 16 patents)

7. Budi Njoman (2 patents)

8. Kok Hua Chua (4 patents)

9. Zheng Peng Xiong (1 patent)

8 patents: Sort by Forward Citations

1. 12408368 - Method of making a semiconductor device using a dummy gate (2025-09-02),

2. 12278234 - Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods (2025-04-14),

3. 12191309 - Method to induce strain in finFET channels from an adjacent region (2025-01-07),

4. 11948943 - Method to induce strain in FINFET channels from an adjacent region (2024-04-02),

5. 11670554 - Method to co-integrate SiGe and Si channels for finFET devices (2023-06-06),

6. 11610886 - Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods (2023-03-21),

7. 11587928 - Method to induce strain in finFET channels from an adjacent region (2023-02-21),

8. 6202423 - Non-damage transport system by ice condensation (2001-03-20),

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Profile summary based on public USPTO records.