IDiyas

For the Inventor, By the Inventor

Schenectady, NY, United States of America

Prasanna Khare

USPTO Granted Patents = 49 

 

Average Co-Inventor Count = 3.1

ph-index = 9

Forward Citations = 218(Granted Patents)


Location History:

  • Phoenix, AZ (US) (2012)
  • Schenectady, NY (US) (2012 - 2023)

Company Filing History:

goldMedal45 out of 2,867 
 
Stmicroelectronics Gmbh
 patents
silverMedal16 out of 164,108 
 
International Business Machines Corporation
 patents
bronzeMedal4 out of 5,671 
 
Globalfoundries Inc.
 patents
4. 4 out of 3,854 
 
Commissariat a L'energie Atomique Et Aux Energies Alternatives
 patents
5. 4 out of 8 
 
Bell Semiconductor, LLC
 patents
6. 1 out of 1,013 
 
Commissariat À L'énergie Atomique Et Aux Énergies Alternatives
 patents
where one patent can have more than one assignee

Years Active: 2012-2025

where 'Filed Patents' based on already Granted Patents

49 patents (USPTO):
1. 12408368 - Method of making a semiconductor device using a dummy gate (2025-09-02),
2. 12278234 - Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods (2025-04-14),
3. 11670554 - Method to co-integrate SiGe and Si channels for finFET devices (2023-06-06),
4. 11610886 - Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods (2023-03-21),
5. 11069682 - Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods (2021-07-20),
6. 10580771 - Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods (2020-03-03),
7. 10340195 - Method to co-integrate SiGe and Si channels for finFET devices (2019-07-02),
8. 10170546 - Fully substrate-isolated FinFET transistor (2019-01-01),
9. 10170475 - Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon region (2019-01-01),
10. 10134899 - Facet-free strained silicon transistor (2018-11-20),
11. 10134895 - Facet-free strained silicon transistor (2018-11-20),
12. 10062690 - Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods (2018-08-28),
13. 10038075 - Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon-germanium region (2018-07-31),
14. 9991351 - Method of making a semiconductor device using a dummy gate (2018-06-05),
15. 9905662 - Method of making a semiconductor device using a dummy gate (2018-02-27),

Title: The Innovative Journey of Prasanna Khare

Introduction: Prasanna Khare, a talented inventor based in Schenectady, NY, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Prasanna Khare holds several patents in the areas of renewable energy, smart grid technologies, and sustainable solutions. His most recent patent focuses on enhancing energy efficiency in industrial processes through innovative control systems.

Career Highlights: With a background in engineering and a passion for sustainable development, Prasanna Khare has had a successful career working for leading tech companies in the United States. His expertise in developing cutting-edge solutions has led to the successful implementation of several projects aimed at reducing carbon footprint and promoting green technologies.

Collaborations: Prasanna Khare has collaborated with top research institutions and universities to further his research and bring his inventions to life. His partnerships with industry experts and academic professionals have resulted in the successful commercialization of his patented technologies.

Conclusion: Prasanna Khare's dedication to innovation and sustainability has positioned him as a key figure in the field of renewable energy and smart technologies. His inventive spirit and commitment to creating a greener future continue to inspire others in the industry.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…