The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Mar. 13, 2017
Applicants:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Stmicroelectronics Inc, Coppell, TX (US);
Inventors:
Emmanuel Augendre, Montbonnot, FR;
Nicolas Loubet, Guilderland, NY (US);
Sylvain Maitrejean, Grenoble, FR;
Pierre Morin, Grenoble, FR;
Assignees:
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
STMICROELECTRONICS Inc, Coppell, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/18 (2006.01); H01L 29/16 (2006.01); H01L 21/8238 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H01L 21/187 (2013.01); H01L 29/16 (2013.01); H01L 29/66795 (2013.01); H01L 29/7842 (2013.01); H01L 29/7843 (2013.01); H01L 29/7851 (2013.01); H01L 29/78684 (2013.01); H01L 21/823807 (2013.01); H01L 29/161 (2013.01);
Abstract
The method of manufacturing a structure comprising one or several strained semiconducting zones capable of forming one or several transistor channel regions, the method including the following steps: