IDiyas

For the Inventor, By the Inventor

Montbonnot, France

Emmanuel Augendre

USPTO Granted Patents = 30 

 

Average Co-Inventor Count = 3.7

ph-index = 3

Forward Citations = 213(Granted Patents)


Location History:

  • Le Sappey en Chartreuse, FR (2020)
  • Montbonnot, FR (2011 - 2023)
  • Grenoble, FR (2022 - 2023)

Company Filing History:

goldMedal24 out of 3,854 
 
Commissariat a L'energie Atomique Et Aux Energies Alternatives
 patents
silverMedal6 out of 164,108 
 
International Business Machines Corporation
 patents
bronzeMedal4 out of 1,013 
 
Commissariat À L'énergie Atomique Et Aux Énergies Alternatives
 patents
4. 2 out of 2,867 
 
Stmicroelectronics Gmbh
 patents
5. 1 out of 757 
 
Stmicroelectronics (crolles 2) Sas
 patents
6. 1 out of 507 
 
Soitec
 patents
7. 1 out of 3,559 
 
Commissariat a L'energie Atomique
 patents
where one patent can have more than one assignee

Years Active: 2011-2024

where 'Filed Patents' based on already Granted Patents

30 patents (USPTO):
1. 12119258 - Semiconductor structure comprising a buried porous layer for RF applications (2024-10-15),
2. 11848191 - RF substrate structure and method of production (2023-12-19),
3. 11688811 - Transistor comprising a channel placed under shear strain and fabrication process (2023-06-27),
4. 11469137 - Manufacturing process of an RF-SOI trapping layer substrate resulting from a crystalline transformation of a buried layer (2022-10-11),
5. 11450755 - Electronic device including at least one nano-object (2022-09-20),
6. 10978594 - Transistor comprising a channel placed under shear strain and fabrication process (2021-04-13),
7. 10818775 - Method for fabricating a field-effect transistor (2020-10-27),
8. 10727320 - Method of manufacturing at least one field effect transistor having epitaxially grown electrodes (2020-07-28),
9. 10714392 - Optimizing junctions of gate all around structures with channel pull back (2020-07-14),
10. 10665497 - Method of manufacturing a structure having one or several strained semiconducting zones that may for transistor channel regions (2020-05-26),
11. 10600786 - Method for fabricating a device with a tensile-strained NMOS transistor and a uniaxial compression strained PMOS transistor (2020-03-24),
12. 10431683 - Method for making a semiconductor device with a compressive stressed channel (2019-10-01),
13. 10269930 - Method for producing a semiconductor device with self-aligned internal spacers (2019-04-23),
14. 10256102 - Method for fabricating a field effect transistor having a surrounding grid (2019-04-09),
15. 10217849 - Method for making a semiconductor device with nanowire and aligned external and internal spacers (2019-02-26),

Title: The Innovative Journey of Emmanuel Augendre

Introduction: Emmanuel Augendre, a visionary inventor hailing from Montbonnot, FR, has left an indelible mark on the world of technology. With an impressive portfolio of 29 patents and a relentless drive for excellence, Augendre continues to inspire future generations of inventors.

Latest Patents:

1. RF substrate structure and method of production: Augendre's groundbreaking patent involves producing a semiconductor or piezoelectric on-insulator type substrate for RF applications. This invention features a unique porous layer under the BOX layer and a layer of polycrystalline semiconductor material.

2. Transistor comprising a channel placed under shear strain and fabrication process: Another one of Augendre's patents revolutionizes field-effect transistors by incorporating a compressively or tensilely strained channel with localized perforations, enabling shear strain in the channel.

Career Highlights: Augendre's innovative spirit has led him to work with prestigious companies such as the Commissariat a L'Energie Atomique et Aux Energies Alternatives (CEA) and International Business Machines Corporation (IBM). His contributions to these organizations have been invaluable in advancing technological frontiers.

Collaborations: Throughout his career, Augendre has collaborated with esteemed professionals like Shay Reboh and Remi Coquand. Together, they have pushed the boundaries of innovation and achieved remarkable technological breakthroughs.

Conclusion: Emmanuel Augendre's unwavering dedication to innovation and his remarkable achievements in the field of technology solidify his status as a trailblazer. His inventive prowess serves as a beacon of inspiration for aspiring inventors worldwide, urging them to explore the realms of what is possible in the ever-evolving landscape of technology.

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