The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Nov. 14, 2018
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
International Business Machines Corporation, Yorktown Heights, NY (US);
Shay Reboh, Grenoble, FR;
Emmanuel Augendre, Montbonnot, FR;
Remi Coquand, Les Marches, FR;
Nicolas Loubet, Guilderland, NY (US);
Commissariat a l'energie atomique et aux energies alternatives, Paris, FR;
International Business Machines Corporation, Yorktown Heights, NY (US);
Abstract
The method for fabricating a field-effect transistor comprises a step of producing a sacrificial gate and first and second spacers covering first, second and third parts of successive first to fifth semiconductor nanowires of a stack. The fabricating method comprises a step of forming a channel area of the transistor, which channel area is compressively stressed and distinct from the second part of the third nanowire. The channel area is connected to a source electrode of the transistor by the first part of the second nanowire, and to a drain electrode of the transistor by the third part of the second nanowire.