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For the Inventor, By the Inventor

Grenoble, France

Shay Reboh

USPTO Granted Patents = 63 

 

Average Co-Inventor Count = 2.6

ph-index = 5

Forward Citations = 92(Granted Patents)


Inventors with similar research interests:


Location History:

  • Guilderland, NY (US) (2016 - 2019)
  • Sassenage, FR (2016 - 2020)
  • La Buisse, FR (2020 - 2023)
  • Grenoble, FR (2017 - 2024)

Company Filing History:

goldMedal51 out of 3,854 
 
Commissariat a L'energie Atomique Et Aux Energies Alternatives
 patents
silverMedal12 out of 164,108 
 
International Business Machines Corporation
 patents
bronzeMedal11 out of 1,013 
 
Commissariat À L'énergie Atomique Et Aux Énergies Alternatives
 patents
4. 3 out of 2,426 
 
Stmicroelectronics S.a.
 patents
5. 2 out of 2,867 
 
Stmicroelectronics Gmbh
 patents
6. 2 out of 757 
 
Stmicroelectronics (crolles 2) Sas
 patents
7. 2 out of 507 
 
Soitec
 patents
where one patent can have more than one assignee

Years Active: 2016-2025

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63 patents (USPTO):
1. 12438036 - Method for manufacturing a SOI or SiGeOI type semiconductor-on-insulator substrate by BESOI and structure for manufacturing such a substrate (2025-10-07),
2. 12327719 - Semiconductor substrate polishing method (2025-06-10),
3. 12198940 - Method for modifying the strain state of a block of a semiconducting material (2025-01-14),
4. 12154786 - Method for modifying a strain state of at least one semiconductor layer (2024-11-26),
5. 12027421 - Low-temperature method for transfer and healing of a semiconductor layer (2024-07-02),
6. 11967633 - Method for fabricating a doped region of a microelectronic device (2024-04-23),
7. 11942323 - Method for manufacturing a doped zone of a microelectronic device (2024-03-26),
8. 11901194 - Method of forming a porous portion in a substrate (2024-02-13),
9. 11848191 - RF substrate structure and method of production (2023-12-19),
10. 11810789 - Method of fabricating a semiconductor substrate having a stressed semiconductor region (2023-11-07),
11. 11769687 - Method for layer transfer with localised reduction of a capacity to initiate a fracture (2023-09-26),
12. 11688629 - Low-temperature method for manufacturing a semiconductor-on-insulator substrate (2023-06-27),
13. 11670540 - Substrates including useful layers (2023-06-06),
14. 11646196 - Method for germanium enrichment around the channel of a transistor (2023-05-09),
15. 11610806 - Multilayer stack of semiconductor-on-insulator type, associated production process, and radio frequency module comprising it (2023-03-21),

Title: The Innovative Mind of Shay Reboh

Introduction: Shay Reboh is a pioneering inventor based in Grenoble, France, known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Shay Reboh holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing her commitment to creating a more efficient and eco-friendly world.

Career Highlights: With a background in engineering and a passion for problem-solving, Shay Reboh has led numerous projects that have revolutionized industries such as healthcare, transportation, and communication. Her innovative solutions have earned her recognition as a trailblazer in the field of invention.

Collaborations: Throughout her career, Shay Reboh has collaborated with leading research institutions, universities, and tech companies to bring her ideas to life. Her ability to work across disciplines and cultures has led to the development of cutting-edge technologies that have had a lasting impact on society.

Conclusion: Shay Reboh's dedication to innovation and her relentless pursuit of excellence have solidified her reputation as a visionary inventor. Her work continues to inspire the next generation of inventors and shape the future of technology.

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