The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Jul. 20, 2022
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Shay Reboh, Grenoble, FR;
Virginie Loup, Grenoble, FR;
Abstract
A method for manufacturing a semiconductor-on-insulator substrate by BESOI comprising the following steps: a) provide a structure comprising a first substrate, a first stopping layer made of SiGe having an atomic percentage of Ge lower than or equal to 30%, an intermediate layer, a second stopping layer made of SiGe having a thickness smaller than the thickness of the first stopping layer and an atomic percentage of Ge higher than or equal to 20%, optionally an active area formed by a layer made of silicon or by a stack of active layers made of Si and SiGe, a dielectric layer, a second substrate, b) thin and then etch the first substrate made of silicon, from the first main face up to the second main face, c) successively remove the first stopping layer, the intermediate layer, and optionally the second stopping layer to obtain a SOI or SiGeOI substrate.