The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Nov. 18, 2021
Applicant:
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Inventors:
Shay Reboh, Grenoble, FR;
Jean-Michel Hartmann, Grenoble, FR;
Frederic Mazen, Grenoble, FR;
Frédéric Milesi, Grenoble, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0201 (2013.01); H01L 21/02002 (2013.01); H01L 21/26586 (2013.01); H01L 21/30604 (2013.01); H01L 21/76254 (2013.01);
Abstract
A method of polishing a semiconductor substrate, including: a) a step of multiple implantations of ions from an upper surface of the substrate, to modify the material of an upper portion of the substrate, the multiple implantation step comprising a plurality of successive implantations under different respective implantation orientations; and b) a step of selective removal of the upper portion of the substrate.