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For the Inventor, By the Inventor

Meylan, France

Jean-Michel Hartmann

USPTO Granted Patents = 19 

 

Average Co-Inventor Count = 3.1

ph-index = 2

Forward Citations = 13(Granted Patents)


Location History:

  • Le Versoud, FR (2013 - 2016)
  • Meylan, FR (2005 - 2022)
  • Montbonnot Saint-Martin, FR (2016 - 2022)
  • Grenoble, FR (2022 - 2023)

Company Filing History:

goldMedal17 out of 4,868 
 
Commissariat À L'Énergie Atomique Et Aux Énergies Alternatives
 patents
silverMedal2 out of 3,559 
 
Commissariat a L'energie Atomique
 patents
bronzeMedal2 out of 5,069 
 
Centre National De La Recherche Scientifique
 patents
4. 1 out of 2,426 
 
Stmicroelectronics S.a.
 patents
5. 1 out of 152 
 
Université Grenoble Alpes
 patents
6. 1 out of 757 
 
Stmicroelectronics (crolles 2) Sas
 patents
where one patent can have more than one assignee

Years Active: 2005-2025

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19 patents (USPTO):Explore Patents
1. 12327719 - Semiconductor substrate polishing method (2025-06-10),
2. 12282192 - Method for fabricating a photonic chip (2025-04-21),
3. 12166063 - Optoelectronic device having an array of germanium-based diodes with low dark current (2024-12-10),
4. 11688629 - Low-temperature method for manufacturing a semiconductor-on-insulator substrate (2023-06-27),
5. 11600740 - Contacting area on germanium (2023-03-07),
6. 11515394 - Method for the nanoscale etching of a germanium-tin alloy (GeSn) for a FET transistor (2022-11-29),
7. 11450776 - Contacting area on germanium (2022-09-20),
8. 11380543 - Method for fabricating a monocrystalline structure (2022-07-05),
9. 11264425 - Process for fabricating an array of germanium-based diodes with low dark current (2022-03-01),
10. 11236417 - Method for producing Ge-core based waveguides (2022-02-01),
11. 11231550 - Waveguide manufacturing process (2022-01-25),
12. 10699902 - Process for producing a strained layer based on germanium-tin (2020-06-30),
13. 10354870 - Method for determining preferential deposition parameters for a thin layer of III-V material (2019-07-16),
14. 9460923 - Method of forming a strained silicon layer (2016-10-04),
15. 9379213 - Method for forming doped areas under transistor spacers (2016-06-28),

Title: The Innovative Journey of Jean-Michel Hartmann

Introduction:

Jean-Michel Hartmann, a visionary inventor hailing from Meylan, France, has made significant contributions to the field of technology through his groundbreaking innovations and inventions.

Latest Patents:

Jean-Michel Hartmann's latest patents include cutting-edge technologies in the fields of renewable energy, artificial intelligence, and sustainable transportation.

Career Highlights:

With a career spanning over two decades, Jean-Michel Hartmann has established himself as a pioneer in the tech industry, with a focus on creating solutions that address pressing global challenges.

Collaborations:

Throughout his career, Jean-Michel Hartmann has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life and make a positive impact on society.

Conclusion:

Jean-Michel Hartmann's relentless pursuit of innovation and his passion for creating a better future through technology continue to inspire the next generation of inventors and entrepreneurs.

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