The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Mar. 26, 2020
Applicant:
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Inventors:
Willy Ludurczak, Grenoble, FR;
Philippe Rodriguez, Grenoble, FR;
Jean-Michel Hartmann, Meylan, FR;
Abdelkader Aliane, Grenoble, FR;
Zouhir Mehrez, Grenoble, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 31/105 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022408 (2013.01); H01L 31/03529 (2013.01); H01L 31/105 (2013.01); H01L 31/1812 (2013.01);
Abstract
A method of forming an area of electric contact with a semiconductor region mainly made of germanium, comprising the forming of a first area made of a first intermetallic material where more than 70% of the non-metal atoms are silicon atoms. There is also described a device including such a contacting area.