The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2023

Filed:

Aug. 27, 2020
Applicant:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventors:

Willy Ludurczak, Grenoble, FR;

Abdelkader Aliane, Grenoble, FR;

Jean-Michel Hartmann, Grenoble, FR;

Zouhir Mehrez, Grenoble, FR;

Philippe Rodriguez, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/105 (2006.01); H01L 31/18 (2006.01); H01L 31/02 (2006.01); H01L 21/285 (2006.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1812 (2013.01); H01L 21/28518 (2013.01); H01L 31/02005 (2013.01); H01L 31/022408 (2013.01); H01L 31/105 (2013.01); H01L 31/1055 (2013.01); H01L 31/1804 (2013.01); H01L 31/1808 (2013.01);
Abstract

A method of forming an opening in an insulating layer covering a semiconductor region including germanium, successively including: the forming of a first masking layer on the insulating layer; the forming on the first masking layer of a second masking layer including an opening; the etching of an opening in the first masking layer, in line with the opening of the second masking layer; the removal of the second masking layer by oxygen-based etching; and the forming of the opening of said insulating layer in line with the opening of the first masking layer, by fluorine-based etching.


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