The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Jan. 22, 2021
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Etienne Eustache, Chalon sur Saone, FR;
Bassem Salem, Sassenage, FR;
Jean-Michel Hartmann, Grenoble, FR;
Franck Bassani, Echirolles, FR;
Mohamed-Aymen Mahjoub, Clermont-Ferrand, FR;
Abstract
A method for the nanoscale etching of a layer of GeSnon a carrier for a FET transistor, x being the concentration of tin in the GeSn alloy, the etching method includes a step of plasma-etching the layer of GeSnusing a mixture comprising dichlorine (Cl) and dinitrogen (N) and under an etching pressure lower than or equal to 50 mTorr, preferably lower than or equal to 10 mTorr. A method for producing a conduction channel on a carrier for a FET transistor, comprising a step of forming a layer of GeSnon the carrier, the layer being produced by epitaxial growth, and a step of etching the layer of GeSnaccording to the etching method. A conduction channel made of GeSnfor a FET transistor, the channel being obtained according to the production method, and a FET transistor comprising a plurality of conduction channels made of GeSn.