The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Nov. 18, 2021
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Shay Reboh, Grenoble, FR;
Abstract
A method for forming a doped zone of a transistor includes providing a stack having at least one active layer made from a semiconductor material, and a transistor gate pattern having at least one lateral side, and modifying a portion of the active layer so as to form a modified portion made of a modified semiconductor material. The modified portion extends down to the at least one lateral side of the gate pattern, at the edge of a non-modified portion above which the gate pattern is located. The method also includes forming a spacer on the lateral side, removing the modified portion by selective etching of the modified semiconductor material with respect to the semiconductor material of the non-modified portion, so as to expose an edge of the non-modified portion, and forming the doped zone by epitaxy starting from the exposed edge.