The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Nov. 19, 2021
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Soitec, Bernin, FR;
Larry Vincent, Grenoble, FR;
Shay Reboh, Grenoble, FR;
Lucie Le Van-Jodin, Grenoble, FR;
Frédéric Milesi, Grenoble, FR;
Ludovic Ecarnot, Bernin, FR;
Gweltaz Gaudin, Crolles, FR;
Didier Landru, Le Champ-près-Froges, FR;
Soitec, Bernin, FR;
Commissariat À L'énergie Atomique Et Aux Énergies Alternatives, Paris, FR;
Abstract
A donor substrate for transferring a single-crystal thin layer made of a first material, onto a receiver substrate. The donor substrate comprises: —a buried weakened plane delimiting an upper portion and a lower portion of the donor substrate, —in the upper portion, a first layer, a second layer adjacent to the buried weakened plane, and a stop layer between the first layer and the second layer, the first layer composed of the first material, the stop layer being formed of a second material, —an amorphized sub-portion, made amorphous by ion implantation, having a thickness less than that of the upper portion, and including at least the first layer; the second layer comprising at least one single-crystal sub-layer, adjacent to the buried weakened plane. Two embodiments of a method may be used for transferring a single-crystal thin layer from the donor substrate.