The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
Nov. 18, 2021
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Shay Reboh, Grenoble, FR;
Abstract
A method for forming at least one doped region of a transistor includes providing a stack having an insulating layer, an active layer, and a gate pattern having a first lateral flank and removing a first portion of the active layer not overlaid by the gate pattern and extending down to the gate pattern, at the edge of a second portion of the active layer overlaid by the gate pattern, so as to expose an edge of the second portion. The edge extends substantially in a continuation of the lateral flank of the gate pattern. The method also includes forming a first spacer having an L shape and having a basal portion in contact with the insulating layer and a lateral portion in contact with the lateral flank; forming a second spacer on the first spacer; removing the basal portion of the first spacer by selective etching with respect to the second spacer, so as to expose the edge of the second portion; and forming the doped region by epitaxy from the exposed edge.