The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2024
Filed:
Mar. 25, 2020
Commissariat À L'energie Atomique ET Aux Énergies Alternatives, Paris, FR;
Soitec, Bernin, FR;
Emmanuel Augendre, Grenoble, FR;
Frédéric Gaillard, Grenoble, FR;
Thomas Lorne, Grenoble, FR;
Emmanuel Rolland, Grenoble, FR;
Christelle Veytizou, Bernin, FR;
Isabelle Bertrand, Bernin, FR;
Frédéric Allibert, Grenoble, FR;
Soitec, Bernin, FR;
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris, FR;
Abstract
A semiconductor structure for radio frequency applications includes a support substrate made of silicon and comprising a mesoporous layer, a dielectric layer arranged on the mesoporous layer and a superficial layer arranged on the dielectric layer. The mesoporous layer comprises hollow pores, the internal walls of which are mainly lined with oxide. The mesoporous layer has a thickness between 3 and 40 microns and a resistivity greater than 20 kohm·cm over its entire thickness. The support substrate has a resistivity between 0.5 and 4 ohm·cm. The invention also relates to a method for producing such a semiconductor structure.