The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Dec. 29, 2017
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
International Business Machines Corporation, Yorktown Heights, NY (US);
Shay Reboh, Grenoble, FR;
Emmanuel Augendre, Montbonnot, FR;
Remi Coquand, Les Marches, FR;
Nicolas Loubet, Guilderland, NY (US);
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
INTERNATIONAL BUSINESS MACHINES CORPORATION, Yorktown Heights, NY (US);
Abstract
A method of manufacturing a field effect transistor is provided, including supplying a substrate surmounted by first, second, and third structures, the second structure arranged between the first and the third structures and including at least one first nano-object located away from the substrate, a part of the first nano-object being configured to form a channel area of the transistor; forming electrodes of the transistor including epitaxial growth of a first material to obtain a first continuity of matter made of the first material between the second structure and the first structure, and to obtain a second continuity of matter made of the first material between the second structure and the third structure; and epitaxial growth of a second material, starting from the first material, the second material having a lattice parameter different from a lattice parameter of the first material of the first and the second continuities.