The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Dec. 11, 2017
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Sylvain Barraud, Le Grand Lemps, FR;
Emmanuel Augendre, Montbonnot, FR;
Remi Coquand, Les Marches, FR;
Shay Reboh, Grenoble, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/7853 (2013.01); H01L 29/78696 (2013.01);
Abstract
Method for making a semiconductor device, comprising:
Barraud, Sylvain. (2019). Method for making a semiconductor device with nanowire and aligned external and internal spacers (U.S. Patent No. 10217849). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10217849
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile