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For the Inventor, By the Inventor

Le Grand Lemps, France

Sylvain Barraud

This inventor holds 22 USPTO granted patents and 12 published patent applications and 13 EPO patents, primarily in Nanotechnology Transistors. Top assignees: Commissariat a L'energie Atomique Et Aux Energies Alternatives, Stmicroelectronics (Crolles 2) Sas. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sylvain Barraud. Retrieved from https://idiyas.com/inventor/sylvain-barraud

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.5

ph-index = 3

Forward Citations = 38(Granted Patents)


Location History:

  • Le Grand Lemps, FR (2015 - 2022)
  • Grenoble, FR (2021 - 2024)

Company Filing History:

goldMedal22 out of 8,827 
 
Commissariat a L'energie Atomique Et Aux Energies Alternatives
 patents
silverMedal2 out of 780 
 
Stmicroelectronics (Crolles 2) Sas
 patents
where one patent can have more than one assignee

Years Active: 2015-2026

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Areas of Expertise:
3D Memory
Field-Effect Transistors
Quantum Dots
Nanowire
Transistor Fabrication
Electronic Components
Microelectronic Devices
Stacked Transistors
Single-Electron Transistor
Quantum Box Device
In-Memory Computing
Semiconductor Structures
22 patents (USPTO):Explore Patents
1. 12588220 - 1TIR memory with a 3D structure (2026-03-24),
2. 12527082 - Microelectronic device with two field-effect transistors having a common electrode (2026-01-13),
3. 12389644 - Method for manufacturing a transistor with a gate-all-around structure (2025-08-12),
4. 12342617 - Microelectronic device with two field-effect transistors (2025-06-24),
5. 12272398 - Three-dimensional structure of memories for in-memory computing (2025-04-08),
6. 12237330 - Architecture with stacked N and P transistors with a channel structure formed of nanowires (2025-02-25),
7. 11889704 - Device comprising wrap-gate transistors and method of manufacturing such a device (2024-01-30),
8. 11532670 - 3D memory and manufacturing process (2022-12-20),
9. 11398593 - Method for producing an electronic component with double quantum dots (2022-07-26),
10. 11239374 - Method of fabricating a field effect transistor (2022-02-01),
11. 11152360 - Architecture of N and P transistors superposed with canal structure formed of nanowires (2021-10-19),
12. 11088259 - Method of manufacturing an electronic component including multiple quantum dots (2021-08-10),
13. 10903349 - Electronic component with multiple quantum islands (2021-01-26),
14. 10522669 - Quantum box device comprising dopants located in a thin semiconductor layer (2019-12-31),
15. 10217849 - Method for making a semiconductor device with nanowire and aligned external and internal spacers (2019-02-26),

Title: The Innovative Mind of Sylvain Barraud

Introduction: Sylvain Barraud, a talented inventor hailing from Le Grand Lemps, France, is known for his groundbreaking contributions to the world of innovation and patents.

Latest Patents: Sylvain Barraud has recently been granted patents for his cutting-edge inventions in the fields of renewable energy and sustainable technology, showcasing his commitment to creating a greener future for generations to come.

Career Highlights: With a career spanning over two decades, Sylvain Barraud has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing unique solutions to address them. His innovative approach has led to the successful commercialization of several patented technologies.

Collaborations: Throughout his career, Sylvain Barraud has collaborated with leading research institutions, universities, and companies to further enhance his inventions and bring them to the global market. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: In conclusion, Sylvain Barraud's passion for innovation, coupled with his dedication to creating sustainable solutions, has solidified his position as a prominent figure in the world of inventors. His relentless pursuit of excellence continues to inspire the next generation of innovators to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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