The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Jun. 22, 2023
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Sylvain Barraud, Grenoble, FR;
Joris Lacord, Grenoble, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/63 (2025.01); H03K 17/687 (2006.01); H10D 86/00 (2025.01);
U.S. Cl.
CPC ...
H10D 86/201 (2025.01); H03K 17/687 (2013.01); H10D 30/637 (2025.01);
Abstract
A microelectronic device includes a field-effect n-MOS transistor, a first N-doped zone, constituting one from among the drain and the source of the n-MOS transistor and a second N-doped zone, constituting the other from among the drain and the source of the n-MOS transistor. The device further includes a field-effect p-MOS transistor, a first P-doped zone, constituting one from among the drain and the source of the p-MOS transistor, a dielectric layer in contact with the doped zones and a rear gate. The n-MOS transistor and the p-MOS transistor are separated by a PN junction.