Joris Lacord

Title: Joris Lacord: Innovator in Microelectronics

Introduction

Joris Lacord is a prominent inventor based in Grenoble, France. He has made significant contributions to the field of microelectronics, holding a total of 4 patents. His work focuses on the development of advanced semiconductor devices, which are crucial for modern electronic applications.

Latest Patents

One of Lacord's latest patents is for a microelectronic device that incorporates two field-effect transistors. This device features a field-effect n-MOS transistor with a first N-doped zone and a second N-doped zone, which serve as the drain and source. Additionally, it includes a field-effect p-MOS transistor, a first P-doped zone, a dielectric layer, and a rear gate, with the n-MOS and p-MOS transistors separated by a PN junction. Another notable patent is a method for fabricating a field-effect transistor (FET). This method involves producing a transistor channel with semiconductor nanowires, creating dummy gates, and etching to form gate locations for the channel.

Career Highlights

Lacord is currently employed at the Commissariat à l'énergie atomique et aux énergies alternatives, a leading research institution in France. His work at this organization has allowed him to explore innovative solutions in the field of microelectronics, contributing to advancements in technology.

Collaborations

Throughout his career, Joris Lacord has collaborated with notable colleagues such as Sylvain Barraud and Olivier Rozeau. These partnerships have fostered a collaborative environment that enhances the research and development of new technologies.

Conclusion

Joris Lacord is a key figure in the microelectronics sector, with a focus on innovative semiconductor devices. His patents and contributions reflect his commitment to advancing technology in this critical field.