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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10522669 B1

PDFFull Text
Date of Patent:
Dec. 31, 2019

Filed:

Oct. 04, 2017

Quantum box device comprising dopants located in a thin semiconductor layer

Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventor:

Sylvain Barraud, Le Grand Lemps, FR;

Assignee:

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Tucker J Wright

Assistant Examiner:

Dmitriy Yemelyanov

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/118 (2006.01); H01L 29/12 (2006.01); H01L 29/66 (2006.01); B82Y 10/00 (2011.01); H01L 29/08 (2006.01); H01L 29/167 (2006.01); H01L 21/768 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7613 (2013.01); B82Y 10/00 (2013.01); H01L 27/11807 (2013.01); H01L 29/0895 (2013.01); H01L 29/127 (2013.01); H01L 29/167 (2013.01); H01L 29/66227 (2013.01); H01L 29/66469 (2013.01); H01L 21/768 (2013.01); H01L 29/786 (2013.01); H01L 29/78621 (2013.01); H01L 2027/11885 (2013.01);
Abstract

A method of making a quantum device with a quantum island structure is provided. The method includes the formation of a stack including a first semiconducting layer based on an undoped semiconducting material on which at least one second doped semiconducting layer is grown by epitaxy, the doping being made during epitaxial growth, a first region belonging to the first semiconducting layer and a second region belonging to the second semiconducting layer being suitable for forming a quantum island.

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Barraud, Sylvain. (2019). Quantum box device comprising dopants located in a thin semiconductor layer (U.S. Patent No. 10522669). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10522669

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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