The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2021

Filed:

May. 16, 2019
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Louis Hutin, Grenoble, FR;

Sylvain Barraud, Grenoble, FR;

Benoit Bertrand, Grenoble, FR;

Maud Vinet, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/3105 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66439 (2013.01); H01L 21/31053 (2013.01); H01L 29/401 (2013.01);
Abstract

A method of fabricating an electronic component with multiple quantum islands is provided, including supplying a substrate on which rests a nanowire made of semiconductor material not intentionally doped, the nanowire having at least two main control gates resting thereon so as to form respective qubits in the nanowire under the two main control gates, the two main control gates being separated by a groove, top and lateral faces of the two main control gates and a bottom of the groove being covered by a dielectric layer; depositing a conductive material in the groove and on the top of the two main control gates; and planarizing down to the dielectric layer on the top of the two main control gates, so as to obtain an element made of conductive material self-aligned between the main control gates.


Find Patent Forward Citations

Loading…