Rives, France

Maud Vinet

USPTO Granted Patents = 91 

 

Average Co-Inventor Count = 3.5

ph-index = 8

Forward Citations = 839(Granted Patents)

Forward Citations (Not Self Cited) = 833(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Albany, NY (US) (2014 - 2016)
  • Rives sur Fure, FR (2015 - 2018)
  • La Haye Fouassiere, FR (2017 - 2018)
  • Rives, FR (2008 - 2022)
  • Claix, FR (2017 - 2022)
  • Grenoble, FR (2008 - 2024)

Company Filing History:


Years Active: 2008-2025

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Areas of Expertise:
Quantum Devices
Electrostatic Control Gates
FET Transistors
Spin Qubits
3D Circuits
Integrated Circuits
Silicon-Germanium Films
Microelectronic Devices
Transistor Fabrication
Dual STI Integrated Circuits
Single-Electron Transistors
Hybrid Semiconductor Devices
91 patents (USPTO):Explore Patents

Title: Maud Vinet: Unveiling Innovation through Patents

Introduction:

Maud Vinet, an esteemed inventor and patent holder hailing from Rives, France, has made a significant impact in the field of technological advancements. With an impressive portfolio of 86 patents, Vinet's contributions have revolutionized the industry with cutting-edge solutions. In this article, we will delve into Vinet's latest patents, illustrious career highlights, notable collaborations, and the invaluable contributions made by this remarkable innovator.

Latest Patents:

Maud Vinet's recent patents showcase a remarkable expertise in chip development and the compensation of local variability of electrostatic potential. One of her latest patents is the "Chip with bifunctional routing and associated method of manufacturing." This invention presents a functionally integrated chip, with advanced features like superconductor routing tracks and conductor routing tracks, providing efficient pathways for electrical signals within the chip.

Vinet's second notable patent is the "Device including elements for compensating for local variability of electrostatic potential." This invention tackles the challenge of electrostatic potential variation within a semiconductor layer. By employing adjustable electrostatic control gates with impedance elements, the device aims to compensate for these localized variations effectively.

Career Highlights:

Throughout her career, Maud Vinet has been associated with renowned organizations, contributing extensively to their innovation and development initiatives. She collaborated with the prestigious Commissariat à l'énergie atomique, a leading French research organization, known for its advancements in nuclear energy and microelectronics. Additionally, Vinet worked with STMicroelectronics GmbH, a global semiconductor and electronics manufacturer specializing in integrated circuits and sensors.

Collaborations:

In addition to her notable career achievements, Maud Vinet has also had the privilege of collaborating with talented individuals within the industry. Notable among her coworkers are Laurent Grenouillet and Yannick Le Tiec, who have worked alongside Vinet on their respective innovative endeavors. Such collaborations highlight Vinet's eagerness to foster a collaborative and knowledge-sharing environment, contributing to the dynamic progress of the technology sector.

Conclusion:

Maud Vinet's contributions in the realms of chip development and compensating for local variability of electrostatic potential have undoubtedly left an indelible mark on the field of innovation and patents. Her latest patents demonstrate her ability to leverage her expertise in resolving critical challenges and pushing the boundaries of technological possibilities. Vinet's career achievements and collaborations exemplify her commitment to the advancement of the industry. As her journey continues, we eagerly anticipate more groundbreaking inventions and patents from this exceptional innovator.

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