The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Jun. 27, 2018
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Leo Bourdet, Saturargues, FR;
Louis Hutin, Saint-Martin-le-Vinoux, FR;
Yann-Michel Niquet, Saint Martin le Vinoux, FR;
Maud Vinet, Claix, FR;
Abstract
A method is described for controlling a spin qubit quantum device that includes a semiconducting portion, a dielectric layer covered by the semiconducting portion, a front gate partially covering an upper edge of the semiconducting portion, and a back gate. The method includes, during a manipulation of a spin state, the exposure of the device to a magnetic field B of value such that g·μ·B>min(Δ(Vbg)). The method also includes the application, on the rear gate, of an electrical potential Vbg of value such that Δ(Vbg)<g·μ·B+2|M|, and the application, on the front gate, of a confinement potential and an RF electrical signal triggering a change of spin state, with g corresponding to the Landé factor, μcorresponding to a Bohr magneton, Δ corresponding to an intervalley energy difference in the semiconducting portion, and Mcorresponding to the intervalley spin-orbit coupling.